Overview of PVD target silicon carbide SiC ceramic sputtering target
Silicon Carbide (SiC), also known as carborundum, is a synthetic ceramic compound made up of silicon and carbon atoms. Known for its exceptional hardness, thermal conductivity, and resistance to chemical reactions and wear, SiC is a versatile material widely used in high-performance applications that demand superior physical and electronic properties. Its unique crystal structure, which can exist in several polytypes, contributes to its multifaceted utility across various industries.
Features of PVD target silicon carbide SiC ceramic sputtering target
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Exceptional Hardness: Silicon carbide ranks just below diamond and boron carbide in hardness, making it an ideal abrasive material.
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High Thermal Conductivity: It is an excellent heat conductor, capable of dissipating heat rapidly, which is crucial for high-power electronic and semiconductor devices.
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Chemical Stability: Resistant to most acids, alkalis, and salt solutions, SiC maintains its properties even under harsh chemical environments.
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Wide Bandgap Semiconducting Material: As a wide bandgap semiconductor, it operates at higher temperatures and frequencies than conventional semiconductors like silicon.
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Mechanical Strength and Wear Resistance: Offers high mechanical strength and excellent wear resistance, suitable for mechanical seals, bearings, and pump components.
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Thermal Shock Resistance: Can withstand rapid temperature changes without cracking or degrading, important for applications involving cyclic heating and cooling.
(PVD target silicon carbide SiC ceramic sputtering target)
Parameters of PVD target silicon carbide SiC ceramic sputtering target
The PVD target silicon carbide SiC ceramic sputtering parameter can vary depending on the desired concentration, composition, and application requirements. Some common parameters used in PVD targets include:
* Concentration: The concentration of SiC particles required to deposit the target is typically between 1-5 parts per cubic inch (pCi). This depends on the type of material being processed.
* Composition: SiC powders with different shapes and sizes can be mixed to create the desired concentration and size of the target.
* Application requirements: SiC targets are commonly used for depositing high-Z materials such as metals, ceramics, glass, and. Other applications may require specific types of materials, such as DNA or magnetic fields.
It’s important to choose a suitable PVD target that meets your specific needs and tolerances. A professional PVD manufacturer will be able to help you select the right tool and process parameters for your specific application.
(PVD target silicon carbide SiC ceramic sputtering target)
Applications of PVD target silicon carbide SiC ceramic sputtering target
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Semiconductor Devices: Used in high-voltage, high-frequency, and high-temperature power electronics, such as MOSFETs, Schottky diodes, and power modules.
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Abrasive Materials: As an abrasive grain in grinding wheels, sandpapers, and cutting tools due to its hardness and wear resistance.
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Refractories and Furnace Linings: In high-temperature furnaces and kilns because of its outstanding thermal stability and resistance to corrosion.
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Ceramic Armor: In lightweight armor systems due to its combination of hardness, toughness, and low density.
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Chemical Process Equipment: For pumps, valves, and seals in corrosive chemical environments where metals would corrode.
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Wire Sawing: As the abrasive medium in wire saws for slicing silicon wafers in the semiconductor industry and gemstones.
Company Profile
MyCarbides is a trusted global chemical material supplier & manufacturer with over 12-year-experience in providing super high-quality carbides and relative products.
The company has a professional technical department and Quality Supervision Department, a well-equipped laboratory, and equipped with advanced testing equipment and after-sales customer service center.
If you are looking for high-quality carbide materials and relative products, please feel free to contact us or click on the needed products to send an inquiry.
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FAQs of PVD target silicon carbide SiC ceramic sputtering target
Q: How is PVD target silicon carbide SiC ceramic sputtering target produced?
A: PVD target silicon carbide SiC ceramic sputtering target is primarily synthesized through the Acheson process, which involves heating a mixture of silica sand and carbon (usually in the form of coke) in an electric furnace at high temperatures.
Q: Is PVD target silicon carbide SiC ceramic sputtering target conductive?
A: Yes, PVD target silicon carbide SiC ceramic sputtering target is a semiconductor material with unique electronic properties, including high breakdown voltage and thermal conductivity, making it suitable for power electronics.
Q: Can PVD target silicon carbide SiC ceramic sputtering target be used in extreme environments?
A: Absolutely, SiC’s high temperature stability, resistance to radiation damage, and ability to withstand thermal shocks make it ideal for applications in space, nuclear reactors, and deep-well drilling.
Q: What gives PVD target silicon carbide SiC ceramic sputtering target its unique properties?
A: The covalent bond structure of PVD target silicon carbide SiC ceramic sputtering target, along with its tight crystal lattice, contributes to its hardness, high melting point, and resistance to wear and corrosion.
Q: Is PVD target silicon carbide SiC ceramic sputtering target biocompatible?
A: SPVD target silicon carbide SiC ceramic sputtering target has been investigated for biomedical applications due to its biocompatibility, inertness, and durability, with potential uses in orthopedic implants and surgical instruments.
(PVD target silicon carbide SiC ceramic sputtering target)
