Overview of High quality SiC silicon carbide Carborundum sputtering target
Silicon Carbide (SiC), also known as carborundum, is a synthetic ceramic compound made up of silicon and carbon atoms. Known for its exceptional hardness, thermal conductivity, and resistance to chemical reactions and wear, SiC is a versatile material widely used in high-performance applications that demand superior physical and electronic properties. Its unique crystal structure, which can exist in several polytypes, contributes to its multifaceted utility across various industries.
Features of High quality SiC silicon carbide Carborundum sputtering target
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Exceptional Hardness: Silicon carbide ranks just below diamond and boron carbide in hardness, making it an ideal abrasive material.
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High Thermal Conductivity: It is an excellent heat conductor, capable of dissipating heat rapidly, which is crucial for high-power electronic and semiconductor devices.
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Chemical Stability: Resistant to most acids, alkalis, and salt solutions, SiC maintains its properties even under harsh chemical environments.
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Wide Bandgap Semiconducting Material: As a wide bandgap semiconductor, it operates at higher temperatures and frequencies than conventional semiconductors like silicon.
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Mechanical Strength and Wear Resistance: Offers high mechanical strength and excellent wear resistance, suitable for mechanical seals, bearings, and pump components.
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Thermal Shock Resistance: Can withstand rapid temperature changes without cracking or degrading, important for applications involving cyclic heating and cooling.
(High quality SiC silicon carbide Carborundum sputtering target)
Parameters of High quality SiC silicon carbide Carborundum sputtering target
The parameters that can affect the high-quality SiC silicon carbide-carborundum (SiC-C) sputtering target include:
1. Sputter gas pressure: The higher the sputter gas pressure, the more energetic the sputtering process and the better the yield of high-quality SiC.
2. Sputter gas composition: The choice of sputtering gas can greatly affect the properties of the resulting SiC. For example, noble gases such as neon or argon have a lower ionization energy and thus produce smaller and more uniform particles.
3. Sputter film temperature: The higher the temperature of the sputtered film, the easier it is to achieve high quality control on the film thickness and grain size.
4. Target metal content: The presence of certain elements in the target material can help to improve the sputtering process and reduce impurities.
5. Target material structure: The shape and size of the target can affect the sputtering process and result in different patterns and properties of the final SiC product.
These are just some of the possible parameters that can affect the high-quality SiC-C sputtering target. Other factors may also be important depending on the specific application and requirements.
(High quality SiC silicon carbide Carborundum sputtering target)
Applications of High quality SiC silicon carbide Carborundum sputtering target
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Semiconductor Devices: Used in high-voltage, high-frequency, and high-temperature power electronics, such as MOSFETs, Schottky diodes, and power modules.
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Abrasive Materials: As an abrasive grain in grinding wheels, sandpapers, and cutting tools due to its hardness and wear resistance.
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Refractories and Furnace Linings: In high-temperature furnaces and kilns because of its outstanding thermal stability and resistance to corrosion.
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Ceramic Armor: In lightweight armor systems due to its combination of hardness, toughness, and low density.
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Chemical Process Equipment: For pumps, valves, and seals in corrosive chemical environments where metals would corrode.
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Wire Sawing: As the abrasive medium in wire saws for slicing silicon wafers in the semiconductor industry and gemstones.
Company Profile
MyCarbides is a trusted global chemical material supplier & manufacturer with over 12-year-experience in providing super high-quality carbides and relative products.
The company has a professional technical department and Quality Supervision Department, a well-equipped laboratory, and equipped with advanced testing equipment and after-sales customer service center.
If you are looking for high-quality carbide materials and relative products, please feel free to contact us or click on the needed products to send an inquiry.
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FAQs of High quality SiC silicon carbide Carborundum sputtering target
Q: How is High quality SiC silicon carbide Carborundum sputtering target produced?
A: High quality SiC silicon carbide Carborundum sputtering target is primarily synthesized through the Acheson process, which involves heating a mixture of silica sand and carbon (usually in the form of coke) in an electric furnace at high temperatures.
Q: Is High quality SiC silicon carbide Carborundum sputtering target conductive?
A: Yes, High quality SiC silicon carbide Carborundum sputtering target is a semiconductor material with unique electronic properties, including high breakdown voltage and thermal conductivity, making it suitable for power electronics.
Q: Can High quality SiC silicon carbide Carborundum sputtering target be used in extreme environments?
A: Absolutely, SiC’s high temperature stability, resistance to radiation damage, and ability to withstand thermal shocks make it ideal for applications in space, nuclear reactors, and deep-well drilling.
Q: What gives High quality SiC silicon carbide Carborundum sputtering target its unique properties?
A: The covalent bond structure of High quality SiC silicon carbide Carborundum sputtering target, along with its tight crystal lattice, contributes to its hardness, high melting point, and resistance to wear and corrosion.
Q: Is High quality SiC silicon carbide Carborundum sputtering target biocompatible?
A: SHigh quality SiC silicon carbide Carborundum sputtering target has been investigated for biomedical applications due to its biocompatibility, inertness, and durability, with potential uses in orthopedic implants and surgical instruments.
(High quality SiC silicon carbide Carborundum sputtering target)
