Overview of 4/6H-N/P/Semi Type 2-8 Inch Silicon Carbide (SiC) Wafers and Substrates
Silicon Carbide (SiC), also known as carborundum, is a synthetic ceramic compound made up of silicon and carbon atoms. Known for its exceptional hardness, thermal conductivity, and resistance to chemical reactions and wear, SiC is a versatile material widely used in high-performance applications that demand superior physical and electronic properties. Its unique crystal structure, which can exist in several polytypes, contributes to its multifaceted utility across various industries.
Features of 4/6H-N/P/Semi Type 2-8 Inch Silicon Carbide (SiC) Wafers and Substrates
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Exceptional Hardness: Silicon carbide ranks just below diamond and boron carbide in hardness, making it an ideal abrasive material.
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High Thermal Conductivity: It is an excellent heat conductor, capable of dissipating heat rapidly, which is crucial for high-power electronic and semiconductor devices.
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Chemical Stability: Resistant to most acids, alkalis, and salt solutions, SiC maintains its properties even under harsh chemical environments.
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Wide Bandgap Semiconducting Material: As a wide bandgap semiconductor, it operates at higher temperatures and frequencies than conventional semiconductors like silicon.
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Mechanical Strength and Wear Resistance: Offers high mechanical strength and excellent wear resistance, suitable for mechanical seals, bearings, and pump components.
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Thermal Shock Resistance: Can withstand rapid temperature changes without cracking or degrading, important for applications involving cyclic heating and cooling.
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Parameters of 4/6H-N/P/Semi Type 2-8 Inch Silicon Carbide (SiC) Wafers and Substrates
The 4/6H-N/P/Semi Type 2-8 Silicon Carbide (SiC) wafers and substrates can be found in various industries such as automotive, aerospace, electronics, and medical devices. They are used for various applications such as photovoltaics, electronic devices, and semiconductors.
SiC wafers are known for their high electrical conductivity, heat resistance, and durability. They can withstand high temperatures and periods of use, making them ideal for applications that require a long-term operating temperature range. SiC wafer surfaces are also very smooth and efficient, which makes them suitable for both residential and commercial applications.
The 4/6H-N/P/Semi Type 2-8-inch carbide wafers and substrates are made from highly precision materials such as SiC and P who give them exceptional physical properties. They can be either horizontal or vertical forms, depending on the application requirements. The SiC wafers are made using a process called surface processing, where individual chips are cut out using specialized tools. The substrate is made of a combination of high-quality materials such as aluminum, copper, and to ensure the performance and reliability of the wafers.
In addition to their specific performance characteristics, the 4/6H-N/P/Semi Type 2-8-inch carbide wafers and substrates are designed with user-friendly features such as ease of operation, alignment, and flexible design options. They can be customized to meet different design needs, including blade shape, corner-to ratio, and center-to-center ratio.
Overall, the 4/6H-N/P/Semi Type 2-8-inch carbide wafers and substrates are valuable components for a variety of applications, providing excellent performance and reliability at an affordable price point.
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Applications of 4/6H-N/P/Semi Type 2-8 Inch Silicon Carbide (SiC) Wafers and Substrates
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Semiconductor Devices: Used in high-voltage, high-frequency, and high-temperature power electronics, such as MOSFETs, Schottky diodes, and power modules.
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Abrasive Materials: As an abrasive grain in grinding wheels, sandpapers, and cutting tools due to its hardness and wear resistance.
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Refractories and Furnace Linings: In high-temperature furnaces and kilns because of its outstanding thermal stability and resistance to corrosion.
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Ceramic Armor: In lightweight armor systems due to its combination of hardness, toughness, and low density.
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Chemical Process Equipment: For pumps, valves, and seals in corrosive chemical environments where metals would corrode.
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Wire Sawing: As the abrasive medium in wire saws for slicing silicon wafers in the semiconductor industry and gemstones.
Company Profile
MyCarbides is a trusted global chemical material supplier & manufacturer with over 12-year-experience in providing super high-quality carbides and relative products.
The company has a professional technical department and Quality Supervision Department, a well-equipped laboratory, and equipped with advanced testing equipment and after-sales customer service center.
If you are looking for high-quality carbide materials and relative products, please feel free to contact us or click on the needed products to send an inquiry.
Payment Methods
L/C, T/T, Western Union, Paypal, Credit Card etc.
Shipment
It could be shipped by sea, by air, or by reveal ASAP as soon as repayment receipt.
FAQs of 4/6H-N/P/Semi Type 2-8 Inch Silicon Carbide (SiC) Wafers and Substrates
Q: How is 4/6H-N/P/Semi Type 2-8 Inch Silicon Carbide (SiC) Wafers and Substrates produced?
A: 4/6H-N/P/Semi Type 2-8 Inch Silicon Carbide (SiC) Wafers and Substrates is primarily synthesized through the Acheson process, which involves heating a mixture of silica sand and carbon (usually in the form of coke) in an electric furnace at high temperatures.
Q: Is 4/6H-N/P/Semi Type 2-8 Inch Silicon Carbide (SiC) Wafers and Substrates conductive?
A: Yes, 4/6H-N/P/Semi Type 2-8 Inch Silicon Carbide (SiC) Wafers and Substrates is a semiconductor material with unique electronic properties, including high breakdown voltage and thermal conductivity, making it suitable for power electronics.
Q: Can 4/6H-N/P/Semi Type 2-8 Inch Silicon Carbide (SiC) Wafers and Substrates be used in extreme environments?
A: Absolutely, SiC’s high temperature stability, resistance to radiation damage, and ability to withstand thermal shocks make it ideal for applications in space, nuclear reactors, and deep-well drilling.
Q: What gives 4/6H-N/P/Semi Type 2-8 Inch Silicon Carbide (SiC) Wafers and Substrates its unique properties?
A: The covalent bond structure of 4/6H-N/P/Semi Type 2-8 Inch Silicon Carbide (SiC) Wafers and Substrates, along with its tight crystal lattice, contributes to its hardness, high melting point, and resistance to wear and corrosion.
Q: Is 4/6H-N/P/Semi Type 2-8 Inch Silicon Carbide (SiC) Wafers and Substrates biocompatible?
A: S4/6H-N/P/Semi Type 2-8 Inch Silicon Carbide (SiC) Wafers and Substrates has been investigated for biomedical applications due to its biocompatibility, inertness, and durability, with potential uses in orthopedic implants and surgical instruments.
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